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DMP2130LDM
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV DSS
-20
?
?
V
I D = -250 μ A, V GS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
On State Drain Current (Note 5)
Static Drain-Source On-Resistance (Note 5)
T J = 25 ° C
I DSS
I GSS
V GS(th)
I D (ON)
R DS (ON)
?
?
-0.6
-15
?
?
?
?
?
51
82
-1
± 100
-1.25
?
80
110
μ A
nA
V
A
m Ω
V DS = -20V, V GS = 0V
V DS = 0V, V GS = ± 12V
V DS = V GS , I D = -250 μ A
V GS = -4.5V, V DS = -5V
V GS = -4.5V, I D = -4.5A
V GS = -2.7V, I D = -3.8A
94
130
V GS = -2.5V, I D = -3.7A
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
Maximum Body-Diode Continuous Current (Note 1)
g FS
V SD
I S
?
?
?
6.3
0.79
?
?
-1.26
1.7
S
V
A
V DS = -10V, I D = -4.5A
I S = -1.7A, V GS = 0V
?
DYNAMIC PARAMETERS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
C iss
C oss
C rss
?
?
?
?
?
?
?
?
?
?
7.3
2.0
1.9
12
20
38
41
443
125
98
?
?
?
?
?
?
?
?
?
?
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V GS = -4.5V, V DS = -10V, I D = 4.5A
V GS = -4.5V, V DS = -10V, I D = 4.5A
V GS = -4.5V, V DS = -10V, I D = 4.5A
V DS = -10V, V GS = -4.5V,
R L = 10 Ω , R G = 6 Ω
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
5. Test pulse width t = 300 μ s.
6. Guaranteed by design. Not subject to production testing.
V DS = -5V
Pulsed
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMP2130LDM
Document number: DS31118 Rev. 6 - 2
2 of 4
www.diodes.com
May 2008
? Diodes Incorporated
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